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PTB 20017
150 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20017 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz cellular
radio frequency band. Rated at 150 watts minimum output power, it
may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
150 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 150 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
240
Output Power (Watts)
200
160
120
80
40
0
0
7
14
21
28
35
200
17
LOT
COD
E
V
CC
= 25 V
I
CQ
= 200 mA (per side)
f = 900 MHz
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
60
4.0
25
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
