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PTB 20031
40 Watts, 420–470 MHz
RF Power Transistor
Description
The 20031 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40
watts minimum output power, and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
40 Watts, 420–470 MHz
Class AB Characteristics
50% Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
Output Power (Watts)
50
40
30
20
10
0
0
2
4
6
8
10
200
31
LOT
CO
DE
V
CC
= 24 V
I
CQ
= 200 mA
f = 470 MHz
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
10.0
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/23/98
ERICSSON [ ERICSSON ]
