e
PTB 20046
1 Watt, 1465–1513 MHz
Cellular Radio RF Power Transistor
Description
The 20046 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
1 Watt, 1465–1513 MHz
Class AB Characteristics
18% Collector Efficiency at 1 Watt
Gold Metallization
Silicon Nitride Passivated
200
46
LOT
COD
E
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
Tstg
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.7
10
0.057
150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
