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PTB 20051
6 Watts, 1.465–1.513 GHz
Cellular Radio RF Power Transistor
Description
The 20051 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
6 Watts, 1.465–1.513 GHz
Class AB Characteristics
35% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
9.0
Output Power (Watts)
7.5
6.0
4.5
3.0
1.5
0.0
0
0.5
1
1.5
2
200
51
LOT
COD
E
V
CC
= 26 V
I
CQ
= 40 mA
f = 1.501 GHz
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.7
28
0.16
–40 to +150
6.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
