e
PTB 20078
2.5 Watts, 1525–1660 MHz
INMARSAT RF Power Transistor
Description
The 20078 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
2.5 Watts, 1525–1660 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
4.5
Output Power (Watts)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
200
78
LO
TC
OD
E
V
CC
= 26 V
I
CQ
= 20 mA
f = 1.66 GHz
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
Tstg
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.5
10.0
0.057
150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
