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PTB 20079
10 Watts, 1.6–1.7 GHz
INMARSAT RF Power Transistor
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally-
matched, common emitter RF Power transistor intended for 26 Vdc
operation across 1.6 to 1.7 GHz frequency band. It is rated at 10
Watts minimum output power for PEP applications. Ion implantation,
nitride surface passivation and gold metallization ensure excellent
device reliability. 100% lot traceability is standard.
10 Watts, 1.6–1.7 GHz
Class A/AB Characteristics
38% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
16
+24V
14
+26V
+22V
Output Power (Watts)
12
10
8
6
4
2
0
0.00
2007
9
LOT
COD
E
f = 1.65 GHz
I
CQ
= 100 mA
0.50
1.00
1.50
2.00
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
1.4
52
0.29
–40 to +150
3.4
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
