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PTB 20125
100 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20125 is an NPN, push-pull RF power transistor intended for 26
Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in CDMA or TDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
100 Watts, 1.8–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 100 Watts
Gold Metallization
Silicon Nitride Passivated
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
11
Output Power (W)
140
120
Gain (dB)
10
9
8
7
6
V
CC
= 26 V
I
CQ
= 200 mA
100
80
Output Power & Efficiency
12
2012
5
LOT
COD
E
Gain (dB)
60
40
Efficiency (%)
20
2050
5
1750
1800
1850
1900
1950
2000
Frequency (MHz)
Package 20225 *
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
55
4.0
14
400
2.3
–40 to +150
0.44
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
* This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications.
1
5/1 9/98
ERICSSON [ ERICSSON ]
