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PTB 20144
6 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20144 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
6 Watts, 915–960 MHz
Class AB Characteristics
50% Typ Collector Efficiency at 6 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
12
10
8
6
4
2
0
0.00
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 50 mA
f = 960 MHz
20
LO
TC
OD
14
E
4
0.25
0.50
0.75
1.00
1.25
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Tstg
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
60
4.0
1.7
22
0.125
–40 to +150
8
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
