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PTB 20145
9 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20145 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
9 Watts, 915–960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 9 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
12
10
8
6
4
2
0
0.00
Output Power (Watts)
20
LO
TC
O
14
DE
5
V
CC
= 25V
I
CQ
= 50 mA
f = 960 MHz
0.25
0.50
0.75
1.00
1.25
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
1
9/28/98
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
60
4.0
2.6
33
0.19
–40 to +150
5.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
ERICSSON [ ERICSSON ]
