e
PTB 20170
30 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20170 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
30 Watts, 1.8–2.0 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
40
Output Power (Watts)
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
2017
LOT
COD
E
0
V
CC
= 26 V
I
CQ
= 100 mA
f = 2.0 GHz
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CES
V
EBO
I
C
P
D
Value
55
55
4.0
6.7
123
0.7
–40 to +150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
