e
PTB 20191
12 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20191 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12
watts (CW) minimum output power, or 15 watts (PEP) output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.
Class AB Characteristics
26 Volt, 1.9 GHz Characterization
- Output Power = 12 W(CW), 15 W(PEP)
Internal Input Matching
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
25
Output Power (Watts)
20
15
10
201
91
LOT
COD
E
V
CC
= 26 V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
CQ
= 100 mA
f = 1.9 GHz
Input Power (Watts)
Package 20226
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage (emitter open)
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
20
50
4.0
2.8
60
0.34
–40 to +150
2.90
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
