e
PTB 20193
60 Watts, 1.8–1.9 GHz
Cellular Radio RF Power Transistor
Description
The 20193 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 1.8–1.9 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
Output Power (Watts)
60
50
40
30
20
10
1
3
5
7
9
11
13
201
93
LOT
COD
E
V
CC
= 26 V
I
CQ
= 150 mA
f = 1.9 GHz
Input Power (Watts)
Package 20223
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CES
V
EBO
I
C
P
D
Value
55
55
4.0
8
233
1.33
–40 to +150
0.75
Unit
Vdc
Vdc
Vdc
Adc
W
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
