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PTB20219 参数 Datasheet PDF下载

PTB20219图片预览
型号: PTB20219
PDF下载: 下载PDF文件 查看货源
内容描述: 70瓦, 925-960 MHz蜂窝无线电射频功率晶体管 [70 Watts, 925-960 MHz Cellular Radio RF Power Transistor]
分类和应用: 晶体射频双极晶体管放大器蜂窝无线局域网
文件页数/大小: 4 页 / 567 K
品牌: ERICSSON [ ERICSSON ]
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PTB 20219
70 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20219 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation across the 925 to 960 MHz frequency
band. It is rated at 70 watts minimum output power for both CW and
PEP applications. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability. 100%
lot traceability is standard.
70 Watts, 925–960 MHz
Class AB Characteristics
Guaranteed Performance at 26 Volts, 960
MHz
- Output Power = 70 Watts
- Collector Efficiency = 50% min. at 70 Watts
- IMD = -30 max. at 50 W(PEP)
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
Output Power (Watts)
2021
9
LOT
COD
E
f = 960 MHz
V
CC
= 26 V
I
CQ
= 0.200 A
Input Power (Watts)
Package 20216
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
65
4.0
20
159
0.95
–40 to +150
1.1
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98