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PTB20230 参数 Datasheet PDF下载

PTB20230图片预览
型号: PTB20230
PDF下载: 下载PDF文件 查看货源
内容描述: 45瓦,1.8-2.0 GHz的PCN / PCS功率晶体管 [45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor]
分类和应用: 晶体晶体管过程控制系统个人通信PCSPCN
文件页数/大小: 4 页 / 155 K
品牌: ERICSSON [ ERICSSON ]
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PTB 20230
45 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20230 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
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45 Watts, 1.8–2.0 GHz
Class AB Characteristics
45% Collector Efficiency at 45 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
60
50
40
30
20
10
0
0
2
4
6
8
10
Output Power (Watts)
2023
0
LOT
COD
E
V
CC
= 26 V
I
CQ
= 250 mA
f = 2.0 GHz
Input Power (Watts)
Package 20234
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
55
4.0
7.7
200
1.2
–40 to +150
0.85
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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