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PTB20245 参数 Datasheet PDF下载

PTB20245图片预览
型号: PTB20245
PDF下载: 下载PDF文件 查看货源
内容描述: 35瓦, 2.1-2.2 GHz的宽带CDMA功率晶体管 [35 Watts, 2.1-2.2 GHz Wide-Band CDMA Power Transistor]
分类和应用: 晶体射频双极晶体管开关局域网
文件页数/大小: 5 页 / 307 K
品牌: ERICSSON [ ERICSSON ]
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PTB 20245
35 Watts, 2.1–2.2 GHz
Wide-Band CDMA Power Transistor
Description
The 20245 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band.
Rated at 35 watts minimum output power for PEP applications, it is
specifically intended for operation as a final or driver stage in Wide
CDMA or TDMA systems. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
35 Watts, 2.1–2.2 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
Output Power (Watts)
50
40
30
20
10
0
0
2
4
6
8
10
12
202
45
LOT
COD
E
V
CC
= 26 V
I
CQ
= 100 mA
f = 2000 MHz
Input Power (Watts)
Package 20223
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
55
3.5
7.7
200
1.2
–40 to +150
0.85
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98