PTF 10009
85 Watts, 1.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 50% efficiency and
13.0 dB of gain. Nitride surface passivation and full gold metallization
are used to ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% lot traceability
•
•
•
•
Typical Output Power and Efficiency vs. Input Power
100
90
Output Power (W)
80
70
60
50
40
30
20
10
0
0.0
1.0
2.0
3.0
4.0
5.0
Efficiency (%)
80
72
64
56
48
40
32
24
16
8
0
Output Power
Efficiency
1234
1000
5697
44
9
V
DS
= 28 V
I
DQ
= 600 mA Total
f = 960 MHz
Input Power (Watts)
Package 20230
Maximum Ratings
Parameter
Drain-Source Voltage
(1)
Gate-Source Voltage
(1)
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
(1)
per side
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
270
1.54
-65 to 150
0.65
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
All published data at T
CASE
= 25°C unless otherwise indicated.
e
1
ERICSSON [ ERICSSON ]
