PTF 10020
125 Watts, 860–960 MHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Typical Output Power vs. Input Power
150
960 MHz
Output Power (Watts)
125
100
75
860 MHz
50
900 MHz
A-1
100
20
234
569
813
V
DD
= 28 V
25
0
0
1
2
3
4
5
6
7
I
DQ
= 1.4 A Total
Input Power (Watts)
Package 20240
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.4 A Total, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W(PEP), I
DQ
= 1.4 A Total,
f = 959.9, 960 MHz—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
P-1dB
h
Y
125
50
—
130
55
—
—
—
10:1
Watts
%
—
Symbol
G
ps
Min
11.0
Typ
12.5
Max
—
Units
dB
e
1
ERICSSON [ ERICSSON ]
