欢迎访问ic37.com |
会员登录 免费注册
发布采购

PTF10031 参数 Datasheet PDF下载

PTF10031图片预览
型号: PTF10031
PDF下载: 下载PDF文件 查看货源
内容描述: 50瓦, 1.0 GHz的GOLDMOS场效应晶体管 [50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor]
分类和应用: 晶体射频场效应晶体管放大器局域网
文件页数/大小: 6 页 / 218 K
品牌: ERICSSON [ ERICSSON ]
 浏览型号PTF10031的Datasheet PDF文件第2页浏览型号PTF10031的Datasheet PDF文件第3页浏览型号PTF10031的Datasheet PDF文件第4页浏览型号PTF10031的Datasheet PDF文件第5页浏览型号PTF10031的Datasheet PDF文件第6页  
PTF 10031
50 Watts, 1.0 GHz
GOLDMOS
Field Effect Transistor
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0
dB of gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts
- Output Power = 50 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
Available in Package 20235 as PTF 10015
100% Lot Traceability
Typical Power Out & Efficiency vs. Power In
70
60
90
80
Output Power (W)
Efficiency (%)
70
60
50
Output Power
50
40
30
20
10
0
0
A-12
1003
1
3456
9744
Package
20222
V
DD
= 28 V
I
DQ
= 350 mA
f = 960 MHz
1
2
3
4
40
30
20
Efficiency
Package
20235
A-1
100
15
234
561
970
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation T
CASE
= 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
All published data at T
CASE
= 25°C unless otherwise indicated.
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
175
1.0
-65 to 150
1.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1