PTF 10036
85 Watts, 860–960 MHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10036 is an internally matched, 85 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Typical Output Power vs. Input Power
100
60
Efficiency (%)
80
Output Pow er
60
40
20
0
0
1
2
3
4
5
6
40
50
Efficiency
Output Power (Watts)
A-1
V
DD
= 28 V
I
DQ
= 800 mA Total
f = 960 MHz
30
20
10
100
234
36
569
74
4
Input Power (Watts)
Package 20240
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 800 mA Total, f = 900 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 85 W(PEP), I
DQ
= 800 mA Total,
f = 867, 867.1 MHz—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
Y
Min
11.0
85
50
—
Typ
12.5
90
55
—
Max
—
—
—
3:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
