PTF 10048
30 Watts, 2.1–2.2 GHz, W-CDMA
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10048 is an internally matched 30–watt
GOLDMOS
FET
intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at
40% efficiency with 10.5 dB typical gain. Nitride surface passivation
and full gold metallization ensure excellent device lifetime and
reliability.
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 30 Watts Min
- Gain = 10.5 dB Typ at 30 Watts
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
40
Efficiency
45
Output Power (Watts)
Efficiency (%)
X
30
35
20
10
V
DD
= 28 V
I
DQ
= 425 mA
f = 2170 MHz
Output Pow er
25
A-1
100
234
569
48
940
15
0
0
1
2
3
4
5
Input Power (Watts)
Package 20237
RF Specifications
Characteristic
(100% Tested)
Symbol
G
ps
P-1dB
h
Y
Min
10
30
30
—
Typ
11
36
40
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
Gain
(V
DD
= 28 V, P
OUT
= 10 W, I
DQ
= 425 mA, f = 2.11 & 2.17 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 425 mA, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 425 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 425 mA, f = 2.17 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
e
1
ERICSSON [ ERICSSON ]
