PTF 10053
12 Watts, 2.0 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10053 is a 12–watt
GOLDMOS
FET intended for large
signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency
with 12 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
•
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
•
Typical Output Power & Efficiency vs. Input Power
16
14
Efficiency
50
45
Efficiency (%)
X
40
35
Output Power
8
6
30
25
Output Power (Watts)
12
10
A-1
100
2 3 4
53
569
911
V
DD
= 26 V
4
2
0
0.0
0.5
1.0
1.5
2.0
I
DQ
= 155 mA
f = 2.0 GHz
20
15
10
Input Power (Watts)
Package 20244
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 26 V, P
OUT
= 3 W, I
DQ
= 155 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 155 mA, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 155 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 155 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
10
12
40
—
Typ
12
—
—
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
