PTF 10065
30 Watts, 1.93–1.99 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10065 is a 30–watt
GOLDMOS
FET intended for PCS
amplifier applications from 1.93 to 1.99 GHz. It typically operates with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
•
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 30 Watts Min
- Power Gain = 11.0 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
Output Power and Efficiency vs. Input Power
40
Output Power
80
70
60
Efficiency
20
Output Power (Watts)
30
Efficiency
50
40
e
065
123
456
992
1A
10
V
DD
= 28 V
10
30
20
10
0
I
DQ
= 380 mA
f = 1.99 GHz
0
1
2
3
0
Input Power (Watts)
Package 20237
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.93, 1.99 GHz)
ACPR (40 Walsh Codes)
(V
DD
= 28 V, P
OUT
= 3 W(CDMA), I
DQ
= 380 mA, f = 1.99 GHz)
(V
DD
= 28 V, P
OUT
= 3 W(CDMA), I
DQ
= 380 mA, f = 1.99 GHz)
Gain Flatness
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.930–1.990 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.99 GHz)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
±885 KHz
ACPR
±1.98 MHz
ACPR
GDf
h
D
Min
—
- 50
- 62
—
9
Typ
11.0
—
—
—
—
Max
—
—
—
0.7
—
Units
dB
dBc
dBc
dB
%
(table continues next page)
e
1
ERICSSON [ ERICSSON ]
