PTF 10120
120 Watts, 1.8–2.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10120 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
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•
•
•
•
•
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INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
150
100
Output Power (Watts)
120
Output Power
90
Efficiency
60
80
Efficiency (%)
60
A-12
101
345
698
20
49
40
V
DD
= 28 V
30
I
DQ
= 1.2 A Total
f = 1990 MHz
0
3
6
9
12
15
18
20
0
0
Input Power (Watts)
Package 20250
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 120 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 1.2 A Total, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
10
120
—
—
Typ
11
—
40
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
