PTF 10125
135 Watts, 1.4–1.6 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10125 is an internally matched, common source N-channel
enhancement-mode lateral MOSFET intended for linear driver and
final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
at 135 watts minimum power outpt. Nitride surface passivation and
full gold metallization ensure excellent device lifetime and reliability.
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•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 1.5 GHz, 28 V
- Output Power = 135 Watts Min
- Power Gain = 12.5 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
200
180
Output Power (Watts)
160
140
120
100
80
60
40
20
0
0
3
6
9
12
15
A-12
101
3456
25
9
V
DD
= 28 V
I
DQ
= 1.3 A Total
f = 1500 MHz
935
Input Power (Watts)
Package 20250
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.3 A Total,
f = 1.50, 1.55 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.3 A Total, f = 1.50, 1.55 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 135 W, I
DQ
= 1.3 A Total, f = 1.5 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 67.5 W, I
DQ
= 1.3 A Total, f = 1.5 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
Min
11.5
Typ
12.5
Max
—
Units
dB
P-1dB
h
D
Y
135
35
—
150
40
—
—
—
10:1
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
