PTF 10135
5 Watts, 2.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10135 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal applications from 1.0 to 2.0
GHz. It is rated at 5 watts minimum output power. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability. 100% lot traceability is standard.
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
Typical Output Power vs. Input Power
8
7
Output Power (Watts)
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
A-1
234
569
953
101
35
V
DD
= 26 V
I
DQ
= 70 mA
f = 2000 MHz
Input Power (Watts)
Package 20249
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
39
0.22
–40 to +150
4.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
ERICSSON [ ERICSSON ]
