PTF 10153
60 Watts, 1.8–2.0 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10153 is an internally matched 60–watt
GOLDMOS
FET
intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It
operates with 40% efficiency and 11.5 dB minimum gain. Nitride
surface passivation and full gold metallization ensure excellent de-
vice lifetime and reliability.
•
•
INTERNALLY MATCHED
Guaranteed Performance at 1805, 1843, 1880
MHz, 28 V
- Output Power = 60 Watts Min
- Power Gain = 11.5 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
•
60
50
40
30
Typical Output Power & Efficiency
vs. Input Power
90
Output Power (Watts)
60
50
40
30
20
10
0
0
2
4
6
8
10
12
Efficiency (%)
80
70
V
DD
= 28 V
I
DQ
= 650mA
f = 1880 MHz
A-12
20
10
0
1015
3456
3
99
53
Input Power (Watts)
Package 20248
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA,
f = 1805, 1843, 1880 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 650 mA, f = 1880 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA,
f = 1805, 1843, 1880 MHz)
Return Loss
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA,
f = 1805, 1843, 1880 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA, f = 1805
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
Min
11.5
Typ
—
Max
—
Units
dB
P-1dB
h
D
60
40
—
—
—
—
Watts
%
—
—
—
–9.5
dB
Y
—
—
10:1
—
e
1
ERICSSON [ ERICSSON ]
