PTF 10154
85 Watts, 1.93–1.99 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10154 is an internally matched 85–watt
GOLDMOS
FET
intended for CDMA and TDMA applications from 1.93 to 1.99 GHz.
This device operates at 43% efficiency with 11 dB gain. Nitride surface
passivation and full gold metallization ensure excellent device life-
time and reliability.
•
•
INTERNALLY MATCHED
Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 85 Watts Min
- Power Gain = 11 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
•
Typical Power Output and Efficiency
vs. Input Power
100
50
40
Power Output (Watts)
Efficiency
60
40
20
0
0
3
6
9
12
15
30
Efficiency (%)
x
80
A-12
101
3456
54
00
35
V
DD
= 28 V
Power Output
20
10
0
I
DQ
= 1.15 A
f = 1990 MHz
Input Power (Watts)
Package 20248
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 10 W, I
DQ
= 1.15 A, f = 1.96, 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.15 A, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 90 W, I
DQ
= 1.15 A, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 90 W, I
DQ
= 1.15 A, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
10.0
85
—
—
Typ
11
—
43
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
