PTF 10160
85 Watts, 860–960 MHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10160 is an internally matched 85–watt
GOLDMOS
FET
intended for cellular, GSM, D-AMPS and EDGE applications. It oper-
ates with 53% efficiency and 16 dB typical gain. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
•
•
INTERNALLY MATCHED
Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
Typical Output Power& Efficiency vs. Input Power
120
100
70
60
Efficiency
80
60
40
20
Output Power
0
0
1
2
3
4
5
Output Power (Watts)
40
Efficiency (%)
50
V
DD
= 26 V
I
DQ
= 700 mA
f = 960 MHz
30
20
10
0
1234
5600
55A
1016
0
Input Power (Watts)
Package 20248
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 26 V, P
OUT
= 85 W, I
DQ
= 700 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 700 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 85 W, I
DQ
= 700 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 85 W, I
DQ
= 700 mA, f = 960 MHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
pe
P-1dB
h
Y
Min
15
85
50
—
Typ
16
90
53
—
Max
—
—
—
5:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
