PTF 10195
125 Watts, 869–894 MHz
GOLDMOS
®
Field Effect Transistor
Description
The 10195 is an internally matched 125–watt
GOLDMOS
FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
•
•
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
Full Gold Metallization
Excellent Thermal Stability
100% Lot Traceability
•
•
•
Typical Power Output and Efficiency
vs. Input Power
160
64
56
Power Output (Watts)
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
Power Output
Efficiency
40
Efficiency (%)
48
V
DD
= 28 V
I
DQ
= 1.3 A
f = 894 MHz
32
24
16
8
0
1234
1019
5600
5
-A
Input Power (Watts)
Package 20248
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1300 mA, f = 894 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
pe
P-1dB
h
Y
Min
13
125
45
10:1
Typ
14
140
53
—
Max
—
—
—
—
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
