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F25L004A_09 参数 Datasheet PDF下载

F25L004A_09图片预览
型号: F25L004A_09
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存 [3V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 418 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Flash
FEATURES
Single supply voltage 2.7~3.6V
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
Low power consumption
- Active current : 40mA
- Standby current : 75μA
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Byte program time 7
μ
s(typical)
Erase
- Chip erase time 4s(typical)
- Block erase time 1sec (typical)
- Sector erase time 90ms(typical)
F25L004A
3V Only 4 Mbit Serial Flash Memory
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte-Program operations
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Part No.
F25L004A -50PG
Speed
50MHz
Package
8 lead
SOIC
8 lead
SOIC
8 lead
SOIC
150 mil
150 mil
200 mil
COMMENTS
Pb-free
Pb-free
Pb-free
Part No.
Speed
Package
8 lead
SOIC
8 lead
PDIP
8 lead
PDIP
200 mil
300 mil
300 mil
COMMENTS
Pb-free
Pb-free
Pb-free
F25L004A –100PAG 100MHz
F25L004A –50DG
50MHz
F25L004A -100PG 100MHz
F25L004A -50PAG
50MHz
F25L004A –100DG 100MHz
GENERAL DESCRIPTION
The F25L004A is a 4 Megabit 3V only CMOS Serial Flash
memory device. ESMT’s memory devices reliably store memory
data even after 100,000 program and erase cycles.
The F25L004A features a sector erase architecture. The device
memory array is divided into 128 uniform sectors with 4K byte
each ; 8 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.6
1/30