ESMT
8Mbit (1Mx8)
F25L008A
3V Only Serial Flash Memory
FEATURES
Single supply voltage 2.7~3.6V
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 100MHz
Low power consumption
- typical active current
- 15
μ
A typical standby current
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Byte program time 7
μ
s(typical)
Erase
- Chip erase time 8s(typical)
- Block erase time 1sec (typical)
- Sector erase time 90ms (typical)
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte-Program operations
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Part No.
F25L008A –50PAG
Speed
50MHz
Package
8 lead SOIC
200mil
200mil
300mil
300mil
COMMENTS
Pb-free
Pb-free
Pb-free
Pb-free
F25L008A –100PAG 100MHz 8 lead SOIC
F25L008A –50DG
F25L008A –100DG
50MHz
100MHz
8 lead PDIP
8 lead PDIP
GENERAL DESCRIPTION
The F25L008A is a 8Megablt, 3V only CMOS Serial Flash
memory device organized as 1M bytes of 8 bits. This device is
packaged in 8-lead SOIC 200mil. ESMT’s memory devices
reliably store memory data even after 100,000 program and
erase cycles.
The F25L008A features a sector erase architecture. The device
memory array is divided into 256 uniform sectors with 4K byte
each ; 16 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision:
1.6
1/32
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
