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F25L016A-100PAG 参数 Datasheet PDF下载

F25L016A-100PAG图片预览
型号: F25L016A-100PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2Mx8 ) 3V只有串行闪存 [16Mbit (2Mx8) 3V Only Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 32 页 / 371 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Byte-Program
The Byte-Program instruction programs the bits in the selected
byte to the desired data. The selected byte must be in the erased
state (FFH) when initiating a Program operation. A Byte-Program
instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE must remain active low for
the duration of the Byte-Program instruction. The Byte-Program
F25L016A
instruction is initiated by executing an 8-bit command, 02H,
followed by address bits [A
23
-A
0
]. Following the address, the data
is input in order from MSB (bit 7) to LSB (bit 0). CE must be
driven high before the instruction is executed. The user may poll
the Busy bit in the software status register or wait TBP for the
completion of the internal self-timed Byte-Program operation.
See Figure 4 for the Byte-Program sequence.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
SI
MSB
02
ADD.
MSB
HIGH IMPENANCE
ADD.
ADD.
D
IN
MSB LSB
SO
Figure 4 : BYTE-PROGRAM SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision:
1.4
13/32