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F25L016A-100PAG 参数 Datasheet PDF下载

F25L016A-100PAG图片预览
型号: F25L016A-100PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2Mx8 ) 3V只有串行闪存 [16Mbit (2Mx8) 3V Only Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 32 页 / 371 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Table2 : F25L016A Block Protection Table
Protection Level
0
Upper 1/32
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
All Blocks
All Blocks
0
0
0
0
1
1
1
1
Status Register Bit
BP2
BP1
0
0
1
1
0
0
1
1
BP0
0
1
0
1
0
1
0
1
Protected Memory Area
Block Range
None
Block 31
Block 30~31
Block 28~31
Block 24~31
Block 16~31
Block 0~31
Block 0~31
F25L016A
Address Range
None
1F0000H – 1FFFFFH
1E0000H – 1FFFFFH
1C0000H – 1FFFFFH
180000H – 1FFFFFH
100000H – 1FFFFFH
000000H – 1FFFFFH
000000H – 1FFFFFH
Block Protection (BP2, BP1, BP0)
The Block-Protection (BP2, BP1, BP0) bits define the size of the
memory area, as defined in Table2 to be software protected
against any memory Write (Program or Erase) operations. The
Write-Status-Register (WRSR) instruction is used to program the
BP2, P1, BP0 bits as long as
WP
is high or the
Block-Protection-Look (BPL) bit is 0. Chip-Erase can only be
executed if Block-Protection bits are all 0. After power-up, BP2,
BP1 and BP0 are set to1.
Block Protection Lock-Down (BPL)
WP
pin driven low (V
IL
), enables the Block-Protection
-Lock-Down (BPL) bit. When BPL is set to 1, it prevents any
further alteration of the BPL, BP2, BP1, and BP0 bits. When the
WP
pin is driven high (V
IH
), the BPL bit has no effect and its
value is “Don’t Care”. After power-up, the BPL bit is reset to 0.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision:
1.4
6/32