ESMT
Flash
FEATURES
Single supply voltage 2.3~3.3V
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz
Low power consumption
- Active current：40mA
- Standby current：75
μ
A
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Byte program time 7
μ
s (typical)
Erase
- Chip erase time 4sec(typical)
- Block erase time 1sec (typical)
- Sector erase time 90ms(typical)
F25S004A
2.5V Only 4 Mbit Serial Flash Memory
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte-Program operations
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
PRODUCT ID
F25S004A -50PG
F25S004A -50PAG
F25S004A –50DG
SPEED
50MHz
50MHz
50MHz
PACKAGE
8 lead SOIC
8 lead SOIC
8 lead PDIP
150 mil
200 mil
300 mil
COMMENTS
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The F25S004A is a 4Megabit, 2.5V only CMOS Serial Flash
memory device. ESMT’s memory devices reliably store memory
data even after 100,000 program and erase cycles.
The device features a sector erase architecture. The device
memory array is divided into 128 uniform sectors with 4K byte
each ; 8 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision:
1.1
1/33
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
