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F25S004A-50PG 参数 Datasheet PDF下载

F25S004A-50PG图片预览
型号: F25S004A-50PG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存 [2.5V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 33 页 / 485 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25S004A  
Table2 : F25S004A Block Protection Table  
Protection Level  
Status Register Bit  
Protected Memory Area  
Block Range Address Range  
BP2  
0
BP1  
0
BP0  
0
0
None  
None  
Upper 1/8  
Upper 1/4  
Upper 1/2  
All Blocks  
All Blocks  
All Blocks  
All Blocks  
0
0
1
Block 7  
70000H – 7FFFFH  
60000H – 7FFFFH  
40000H – 7FFFFH  
00000H – 7FFFFH  
00000H – 7FFFFH  
00000H – 7FFFFH  
00000H – 7FFFFH  
0
1
0
Block 6~7  
Block 4~7  
Block 0~7  
Block 0~7  
Block 0~7  
Block 0~7  
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Block Protection (BP2, BP1, BP0)  
Block Protection Lock-Down (BPL)  
The Block-Protection (BP2, BP1, BP0) bits define the size of the  
memory area, as defined in Table2 to be software protected  
against any memory Write (Program or Erase) operations. The  
Write-Status-Register (WRSR) instruction is used to program the  
WP pin driven low (VIL), enables the Block-Protection  
-Lock-Down (BPL) bit. When BPL is set to 1, it prevents any  
further alteration of the BPL, BP2, BP1, and BP0 bits. When the  
WP pin is driven high (VIH), the BPL bit has no effect and its  
value is “Don’t Care”. After power-up, the BPL bit is reset to 0.  
BP2, BP1, BP0 bits as long as WP is high or the  
Block-Protection-Look (BPL) bit is 0. Chip-Erase can only be  
executed if Block-Protection bits are all 0. After power-up, BP2,  
BP1 and BP0 are set to1.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.1  
5/33