ESMT
1. FEATURES
Single supply voltage 2.7V-3.6V
Fast access time: 70/90 ns
1,048,576x8 / 524,288x16 switchable by
BYTE
pin
Compatible with JEDEC standard
- Pin-out, packages and software commands
compatible with single-power supply Flash
Low power consumption
- 7mA typical active current
- 25uA typical standby current
100,000 program/erase cycles typically
20 years data retention
Command register architecture
- Byte programming (9us typical)
- Sector Erase(sector structure: one 16 KB, two 8 KB,
one 32 KB, and fifteen 64 KB)
Auto Erase (chip & sector) and Auto Program
- Any combination of sectors can be erased
concurrently; Chip erase also provided.
- Automatically program and verify data at specified
address
Erase Suspend/Erase Resume
- Suspend or Resume erasing sectors to allow the
read/program in another sector
F49L800UA/F49L800BA
8 Mbit (1M x 8/512K x 16)
3V Only CMOS Flash Memory
Ready/Busy (RY/
BY
)
- RY/
BY
output pin for detection of program or erase
operation completion
End of program or erase detection
- Data polling
- Toggle bits
Hardware reset
- Hardware pin(
RESET
) resets the internal state machine
to the read mode
Sector Protection /Unprotection
- Hardware Protect/Unprotect any combination of sectors
from a program or erase operation.
Low V
CC
Write inhibit is equal to or less than 2.0V
Boot Sector Architecture
- U = Upper Boot Block
- B = Bottom Boot Block
Packages available:
- 48-pin TSOPI
- All Pb-free products are RoHS-Compliant
2. ORDERING INFORMATION
Part No
F49L800UA-70TG
F49L800BA-70TG
Boot
Upper
Bottom
Speed
70 ns
70 ns
Package
TSOPI
TSOPI
Comments
Pb-free
Pb-free
Part No
F49L800UA-90TG
F49L800BA-90TG
Boot
Upper
Bottom
Speed
90 ns
90 ns
Package
TSOPI
TSOPI
Comments
Pb-free
Pb-free
3. GENERAL DESCRIPTION
The F49L800UA/F49L800BA is a 8 Megabit, 3V only
CMOS Flash memory device organized as 1M bytes of 8
bits or 512K words of 16bits. This device is packaged in
standard 48-pin TSOP. It is designed to be programmed
and erased both in system and can in standard EPROM
programmers.
With access times of 70 ns and 90 ns, the
F49L800UA/F49L800BA allows the operation of
high-speed microprocessors. The device has separate
chip enable
CE
, write enable
WE
, and output enable
OE
controls. ESMT's memory devices reliably store memory
data even after 100,000 program and erase cycles.
The F49L800UA/F49L800BA is entirely pin and
command set compatible with the JEDEC standard for 8
Megabit Flash memory devices. Commands are written to
the command register using standard microprocessor
write timings.
The F49L800UA/F49L800BA features a sector erase
architecture. The device memory array is divided into one
16 Kbytes, two 8 Kbytes, one 32 Kbytes, and fifteen 64
Kbytes. Sectors can be erased individually or in groups
without affecting the data in other sectors. Multiple-sector
erase and whole chip erase capabilities provide the
flexibility to revise the data in the device.
The sector protect/unprotect feature disables both
program and erase operations in any combination of the
sectors of the memory. This can be achieved in-system or
via programming equipment.
A low V
CC
detector inhibits write operations on loss of
power. End of program or erase is detected by the
Ready/Busy status pin, Data Polling of DQ7, or by the
Toggle Bit I feature on DQ6. Once the program or erase
cycle has been successfully completed, the device
internally resets to the Read mode.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2008
Revision: 1.6
1/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
