EliteMT
DRAM
M11L416256SA
256 K x 16 DRAM
EDO PAGE MODE
FEATURES
X16 organization
EDO (Extended Data-Output) access mode
2
CAS
Byte/Word Read/Write operation
Single 3.3V (
±
10%) power supply
LVTTL-compatible inputs and outputs
512-cycle refresh in 8ms
Refresh modes :
RAS
only,
CAS
BEFORE
RAS
(CBR)
and HIDDEN capabilities
Self-refresh capability
JEDEC standard pinout
Key AC Parameter
t
RAC
-35
35
t
CAC
10
t
RC
65
t
PC
14
ORDERING INFORMATION - PACKAGE
40-pin 400mil SOJ
44 / 40-pin 400mil TSOP (Type II)
PRODUCT NO.
PACKING
TYPE
COMMENTS
M11L416256SA-
SOJ/TSOPII
35 TG
M11L416256SA-
35 JP
Pb-free
GENERAL DESCRIPTION
The M11L416256 series is a randomly accessed solid state memory, organized as 262,144 x 16 bits device. It offers
Extended Data-Output , 3.3V(
±
10%) single power supply. Access time (-35) , self-refresh and package type (SOJ, TSOP II)
are optional features of this family. All these family have
CAS
- before -
RAS
,
RAS
-only refresh and Hidden refresh
capabilities.
Two access modes are supported by this device: Byte access and Word access. Use only one of the two
CAS
and leave
the other staying high will result in a BYTE access. WORD access happens when two
CAS
(
CASL
,
CASH
) are used.
CASL
transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and
CASH
transiting low will output or input data into the upper byte (IO8~15).
PIN ASSIGNMENT
SOJ Top View
V
CC
I/O0
I/O1
I/O2
I/O3
V
C C
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RA S
NC
A0
A1
A2
A3
V
C C
TSOP (TypeII) Top View
V
S S
I/O1 5
I/O1 4
I/O1 3
I/O1 2
V
S S
I/O1 1
I/O1 0
I/O9
I/O8
NC
CASL
CASH
OE
A8
A7
A6
A5
A4
V
S S
V
CC
I/O0
I/O1
I/O2
I/O3
V
C C
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RA S
NC
A0
A1
A2
A3
V
C C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
S S
I/O1 5
I/O1 4
I/O1 3
I/O1 2
V
S S
I/O1 1
I/O1 0
I/O 9
I/O 8
NC
CASL
CASH
OE
A8
A7
A6
A5
A4
V
S S
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision
:
1.4
1/16
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
