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M12L32162A-6TG 参数 Datasheet PDF下载

M12L32162A-6TG图片预览
型号: M12L32162A-6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的X 2Banks同步DRAM [1M x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 29 页 / 756 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
SDRAM
M12L32162A
1M x 16Bit x 2Banks
Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-
CAS Latency (2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
GENERAL DESCRIPTION
The M12L32162A is 33,554,432 bits synchronous high
data rate Dynamic RAM organized as 2 x 1,048,576 words
by 16 bits, fabricated with high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
ORDERING INFORMATION
Product ID
M12L32162A-6TG
M12L32162A-7TG
Max Freq.
Package
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
M12L32162A-5.5TG 183MHz 54Pin TSOP(II)
166MHz 54Pin TSOP(II)
143MHz 54Pin TSOP(II)
54 Ball BGA
M12L32162A-5.5BG 183MHz
M12L32162A-6BG
M12L32162A-7BG
166MHz
143MHz
54 Ball BGA
54 Ball BGA
PIN CONFIGURATION (TOP VIEW)
54 PIN TSOP(II)
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
NC
BA
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
S SQ
DQ14
DQ13
V
D DQ
DQ12
DQ11
V
S SQ
DQ10
DQ9
V
D DQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
54 Ball BGA(8mmx8mm)
1
A
B
C
D
E
F
G
H
J
V
SS
DQ14
DQ12
2
DQ15
DQ13
DQ11
3
V
SSQ
4
5
6
7
V
DDQ
8
DQ0
DQ2
DQ4
DQ6
9
V
DD
DQ1
V
DDQ
V
SSQ
V
DDQ
V
SSQ
V
DDQ
V
SSQ
DQ3
DQ5
DQ10
DQ9
DQ8
NC
CLK
A11
V
SS
V
DD
LDQM
DQ7
WE
CS
A10
V
DD
UDQM
CKE
A9
CAS
BA
A0
A9
RAS
NC
NC
A8
V
SS
A7
A5
A6
A4
A1
A2
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Mar. 2009
Revision
:
1.2
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