ESMT
SDRAM
M12L64322A (2U)
512K x 32 Bit x 4 Banks
Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
15.6μs refresh interval
ORDERING INFORMATION
Product ID
M12L64322A-5TG2U
M12L64322A-6TG2U
M12L64322A-7TG2U
M12L64322A-5BG2U
M12L64322A-6BG2U
M12L64322A-7BG2U
Max Freq.
200MHz
166MHz
143MHz
200MHz
166MHz
143MHz
Package
86 TSOPII
86 TSOPII
86 TSOPII
90 BGA
90 BGA
90 BGA
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The M12L64322A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
PIN CONFIGURATION (TOP VIEW)
(TSOPII 86L, 400milX875mil Body, 0.5mm Pin Pitch)
V
D D
DQ 0
V
DD Q
DQ 1
DQ 2
V
SSQ
DQ 3
DQ 4
V
DD Q
DQ5
DQ6
V
SS Q
DQ7
NC
V
D D
DQ M 0
WE
CAS
RAS
CS
NC
B A0
B A1
A 1 0 /A P
A0
A1
A2
DQM2
V
DD
NC
DQ 1 6
V
SSQ
DQ 1 7
DQ 1 8
V
DDQ
DQ 1 9
DQ 2 0
V
SSQ
DQ 2 1
DQ 2 2
V
DDQ
D Q2 3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DD Q
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
NC
V
SS
DQM1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
V
SS
NC
DQ31
V
DDQ
DQ30
DQ29
V
SS Q
DQ28
DQ27
V
DDQ
DQ26
DQ25
V
SS Q
DQ24
V
SS
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2010
Revision: 1.0
1/46
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
