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M12S16161A_07 参数 Datasheet PDF下载

M12S16161A_07图片预览
型号: M12S16161A_07
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16位X 2Banks同步DRAM [512K x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 614 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
SDRAM
M12S16161A
512K x 16Bit x 2Banks
Synchronous DRAM
FEATURES
JEDEC standard 2.5V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-
CAS Latency (2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
32ms refresh period (2K cycle)
GENERAL DESCRIPTION
The M12S16161A is 16,777,216 bits synchronous high
data rate Dynamic RAM organized as 2 x 524,288 words by
16 bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
ORDERING INFORMATION
Part NO.
M12S16161A-7TG
M12S16161A-7BG
MAX Freq.
143MHz
143MHz
PACKAGE COMMENTS
50 TSOP(II)
VFBGA
Pb-free
Pb-free
PIN CONFIGURATION (TOP VIEW)
1
A
VSS
2
DQ15
3
4
5
6
DQ0
7
VDD
V
DD
DQ0
DQ1
V
SSQ
DQ2
DQ3
V
DDQ
DQ4
DQ5
V
SSQ
DQ6
DQ7
V
DDQ
LDQM
WE
CAS
RAS
CS
BA
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
V
SS
DQ15
DQ14
V
SSQ
DQ13
DQ12
V
DDQ
DQ11
DQ10
V
SSQ
DQ9
DQ8
V
DDQ
N.C/RFU
UDQM
CLK
CKE
N.C
A9
A8
A7
A6
A5
A4
V
SS
50PIN TSOP(II)
(400mil x 825mil)
(0.8 mm PIN PITCH)
P
A6
A5
A2
A1
60 Ball VFBGA
(6.4x10.1mm)
(0.65mm ball pitch)
N
A8
A7
A0
A10
L
K
NC
CLK
RAS
CAS
J
NC
UDQM
LDQM
WE
G
DQ8
NC
NC
DQ7
F
DQ9
VDDQ
VSSQ
DQ6
D
DQ12
DQ11
DQ4
DQ3
C
DQ13
VDDQ
VSSQ
DQ2
B
DQ14
VSSQ
VDDQ
DQ1
E
DQ10
VSSQ
VDDQ
DQ5
H
NC
NC
NC
NC
CKE
NC
NC
CS
M
A11
A9
NC
NC
R
VSS
A4
A3
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.1
1/29