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M12S128324A-7BG 参数 Datasheet PDF下载

M12S128324A-7BG图片预览
型号: M12S128324A-7BG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×32位×4银行同步DRAM [1M x 32 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 742 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
SDRAM
M12S128324A
1M x 32 Bit x 4 Banks
Synchronous DRAM
FEATURES
JEDEC standard 2.5V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (1, 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
ORDERING INFORMATION
Product No.
M12S128324A-6TG
M12S128324A-6BG
M12S128324A-7TG
M12S128324A-7BG
MAX
FREQ.
166MHz
166MHz
143MHz
143MHz
PACKAGE COMMENTS
86 TSOPII
90 FBGA
86 TSOPII
90 FBGA
Pb-free
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The M12S128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
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