ESMT
M12S16161A
Operation Temperature Condition -40°C~85°C
Page Write Cycle at Different Bank @Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
HIGH
CS
RAS
CAS
*Note2
CAa
ADDR
BA
CBb
CAc
RBb
CBd
RAa
A10/AP
DQ
RAa
RBb
DBb3 DAc0 DAc1
DBb2
DAa1 DAa2
DBb0 DBb1
DBd0
DAa0
DAa3
DBd1
tCDL
tRDL
WE
*Note1
DQM
Precharge
(Both Banks)
Row Active
(A-Bank)
Write
(B-Bank)
Row Active
(B-Bank)
Write
(A-Bank)
Write
(A-Bank)
Write
(B-Bank)
: Don't care
*Note: 1.To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2.To interrupt burst write by row precharge, both the write and the precharge banks must be the same.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2007
Revision : 1.0 16/30
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
