欢迎访问ic37.com |
会员登录 免费注册
发布采购

M12S64164A-10BG 参数 Datasheet PDF下载

M12S64164A-10BG图片预览
型号: M12S64164A-10BG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 1058 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M12S64164A-10BG的Datasheet PDF文件第2页浏览型号M12S64164A-10BG的Datasheet PDF文件第3页浏览型号M12S64164A-10BG的Datasheet PDF文件第4页浏览型号M12S64164A-10BG的Datasheet PDF文件第5页浏览型号M12S64164A-10BG的Datasheet PDF文件第6页浏览型号M12S64164A-10BG的Datasheet PDF文件第7页浏览型号M12S64164A-10BG的Datasheet PDF文件第8页浏览型号M12S64164A-10BG的Datasheet PDF文件第9页  
ESMT
SDRAM
M12S64164A
1M x 16 Bit x 4 Banks
Synchronous DRAM
FEATURES
JEDEC standard 2.5V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
15.6
μ
s refresh interval
ORDERING INFORMATION
PRODUCT NO.
M12S64164A-6TG
M12S64164A-6BG
M12S64164A-7TG
M12S64164A-7BG
M12S64164A-10TG
M12S64164A-10BG
MAX FREQ. PACKAGE Comments
166MHz
166MHz
143MHz
143MHz
100MHz
100MHz
54 TSOP II
54 BGA
54 TSOP II
54 BGA
54 TSOP II
54 BGA
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The M12S64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by
16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.
PIN ASSIGNMENT
Top View
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ1 5
V
S SQ
DQ1 4
DQ1 3
V
DDQ
DQ1 2
DQ1 1
V
S SQ
DQ1 0
DQ9
V
DDQ
DQ8
V
SS
NC
UDQ M
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
1
A
VSS
2
DQ15
3
VSSQ
4
5
6
7
VDDQ
8
DQ0
9
VDD
B
DQ14
DQ13
VDDQ
VSSQ
DQ2
DQ1
C
DQ12
DQ11
VSSQ
VDDQ
DQ4
DQ3
D
DQ10
DQ9
VDDQ
VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD
LDQM
DQ7
F
UDQM
CLK
CKE
CAS
RAS
WE
G
NC
A11
A9
BA0
BA1
CS
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
A3
A2
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2009
Revision: 1.2
1/45