ESMT
DDR SDRAM
Features
JEDEC Standard
Internal pipelined double-data-rate architecture, two data access per clock cycle
Bi-directional data strobe (DQS)
On-chip DLL
Differential clock inputs (CLK and CLK )
DLL aligns DQ and DQS transition with CLK transition
Quad bank operation
CAS Latency : 3; 4
Burst Type : Sequential and Interleave
Burst Length : 2, 4, 8
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)
Data I/O transitions on both edges of data strobe (DQS)
DQS is edge-aligned with data for reads; center-aligned with data for WRITE
Data mask (DM) for write masking only
V
DD
= 2.375V ~ 2.625V, V
DDQ
= 2.375V ~ 2.625V
Auto & Self refresh
32ms refresh period (4K cycle)
SSTL-2 I/O interface
100pin LQFP package
M13S32321A
256K x 32 Bit x 4 Banks
Double Data Rate SDRAM
Ordering Information :
PRODUCT NO.
M13S32321A -5L
MAX FREQ
200MHz
VDD
2.5V
PACKAGE
100 LQFP
COMMENTS
Pb-free
M13S32321A -6L
166MHz
2.5V
100 LQFP
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.1
1/50
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
