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M52D32162A-7TG 参数 Datasheet PDF下载

M52D32162A-7TG图片预览
型号: M52D32162A-7TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的X 2Banks手机同步DRAM [1M x 16Bit x 2Banks Mobile Synchronous DRAM]
分类和应用: 动态存储器手机
文件页数/大小: 32 页 / 808 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
Symbol
t
CC
t
SAC
t
OH
t
CH
t
CL
t
SS
t
SH
t
SLZ
t
SHZ
-7
Min
7
10
-
-
2.0
2.5
2.5
2.5
1.5
1
-
-
Max
1000
6
9
-
-
-
-
-
-
6
9
Min
9
15
-
-
2.0
2.5
2.5
2.5
1.5
1
-
-
-10
M52D32162A
Max
1000
8
10
-
-
-
-
-
-
7
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1
2
3
3
3
3
2
-
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in
Hi-Z
CAS Latency =3
CAS Latency =2
*All AC parameters are measured from half to half.
Note:
1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2009
Revision
:
1.6
6/32