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M52S128168A-10TG 参数 Datasheet PDF下载

M52S128168A-10TG图片预览
型号: M52S128168A-10TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Mobile SDRAM
FEATURES
2.5V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
EMRS cycle with address
All inputs are sampled at the positive going edge of the
system clock
Special function support
-
PASR (Partial Array Self Refresh)
-
TCSR (Temperature Compensated Self Refresh)
-
DS (Driver Strength)
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
M52S128168A
2M x 16 Bit x 4 Banks
Synchronous DRAM
ORDERING INFORMATION
Product ID
M52S128168A-7TG
M52S128168A-7BG
Max Freq.
143MHz
143MHz
Package
54 TSOP II
54 Ball FBGA
54 TSOP II
54 Ball FBGA
54 TSOP II
54 Ball FBGA
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
M52S128168A-7.5TG 133MHz
M52S128168A-7.5BG 133MHz
M52S128168A-10TG
M52S128168A-10BG
100MHz
100MHz
GENERAL DESCRIPTION
The M52S128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words
by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.
PIN ASSIGNMENT (Top View)
1
2
DQ15
3
VSSQ
4
5
6
7
VDDQ
8
DQ0
9
VDD
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
A
VSS
B
DQ14
DQ13
VDDQ
VSSQ
DQ2
DQ1
C
DQ12
DQ11
VSSQ
VDDQ
DQ4
DQ3
D
DQ10
DQ9
VDDQ
VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD
LDQM
DQ7
F
UDQM
CLK
CKE
CAS
RAS
WE
G
NC
A11
A9
BA0
BA1
CS
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
A3
A2
VDD
54 Ball FBGA
(8x8mm)
(mm ball pitch)
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2008
Revision: 1.2
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