2N60
N2 Amps
，
600Volts
N-Channel MOSFET
■
Description
The ET2N60 N-Ceannel enhancement mode silicon gate
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers
.
power MOSFET is
■
Features
R
DS(ON)
= 5.00 @V
GS
= 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■
Symbol
■
Absolute Maximum Ratings
(T
c
=25℃,unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet
Continuous
Drain Current Pulsed
Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation
T
c
=25℃
T
c
=100℃
(Note 1)
Repetitive (Note 1)
Single Pulse (Note
(Note 3)
T
c
=25℃
I
DP
E
AR
E
AS
dv/dt
P
D
55.5
23.6
Symbol
TO-220
V
DSS
V
GSS
I
D
Ratings
TO-220F
600
±30
TO-251
TO-252
V
V
1.9
1.14
7.6
4.4
120
4.5
44
A
A
A
mJ
mJ
V/ns
W
Units
2.0
1.35
8
5.55
130
2.0
＊
1.35
8
＊
＊
1
BEIJING ESTEK ELECTRONICS CO.,LTD
ESTEK [ Estek Electronics Co. Ltd ]
