4N60
4 Amps,600Volts
,
N-Channel MOSFET
■
Description
The ET4N60 N-Channel enhancement mode silicon gate
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers
.
power MOSFET is
■
Features
R
DS(ON)
=2.50 @V
GS
= 10 V
Low gate charge ( typical 16nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■
Symbol
■
Absolute Maximum Ratings
(T
c
=25℃,unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet
Continuous
Drain Current Pulsed
Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation
T
c
=25℃
Derate above 25℃
Repetitive
Single Pulse
T
c
=25℃
T
c
=100℃
(Note 1)
(Note 1)
(Note 2)
(Note 3)
I
DP
E
AR
E
AS
dv/dt
P
D
104
0.83
Symbol
TO-220
V
DSS
V
GSS
I
D
Ratings
TO-220F
600
±30
TO-252
V
V
2.8
1.8
11.2
4.9
210
4.5
34
0.27
49
0.39
A
A
A
mJ
mJ
V/ns
W
W/℃
Units
4.0
2.4
16
10.4
180
4.0
*
2.4
16
*
*
1
BEIJING ESTEK ELECTRONICS CO.,LTD