BLV1N60
N-channel Enhancement Mode Power MOSFET
•
•
•
Avalanche Energy Specified
Fast Switching
Simple Drive Requirements
BV
DSS
R
DS(ON)
I
D
600V
8Ω
Ω
1A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply
.
Absolute Maximum Ratings
(
T
C
=25
o
C unless otherwise noted )
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AR
E
AR
Tj
T
SDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current (
T
C
=100
o
C
)
Drain Current (pulsed)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
Repetitive Avalanche Energy
(Note 1)
(Note 1)
(Note 1)
Value
600
+ 20
1
0.63
4
28
0.22
14
1
2.8
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
o
o
Operating Junction Temperature Range
Storage Temperature Range
C
C
Thermal Characteristics
Symbol
R
th j-c
R
th j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Max.
Max.
Value
4.5
110
Units
℃/
W
℃/
W
-1-
Total 6 Pages
ESTEK [ Estek Electronics Co. Ltd ]
