BLV830
N-channel Enhancement Mode Power MOSFET
•
•
•
Avalanche Energy Specified
Fast Switching
Simple Drive Requirements
BV
DSS
R
DS(ON)
I
D
500V
1.5Ω
Ω
4.5A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply
.
Absolute Maximum Ratings
(
T
C
=25
o
C unless otherwise noted )
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AR
E
AR
Tj
T
SDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current (
T
C
=100
o
C
)
Drain Current (pulsed) (Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note2)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction Temperature Range
Storage Temperature Range
Value
500
+ 20
4.5
2.85
18
75
0.59
250
4.5
7.5
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
o
o
C
C
Thermal Characteristics
Symbol
R
th j-c
R
th j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Max.
Max.
Value
1.67
62.5
Units
℃/
W
℃/
W
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ESTEK [ Estek Electronics Co. Ltd ]
